| PART |
Description |
Maker |
| 2SD638 2SD0638 |
For Medium-Power General Amplification
|
PANASONIC[Panasonic Semiconductor]
|
| TM10T3B-M TM10T3B-H |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM55EZ-H TM55EZ-M TM55RZ-H TM55RZ-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM50TC-M RM50TC-24 RM50TC-2H RM50TC-H |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TM60SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM30TA-H RM30TA-M |
MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| TM400HA-H TM400HA-2H TM400HA-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| AS179-92LF-16 AS179-92LF-EVB |
General purpose medium-power switches in telecommunication applications
|
Skyworks Solutions Inc.
|
| TM60SA-6 |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30CZ-H RM30DZ-H RM30DZ-M RM30CZ-M RM30CZ |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RM20TPM-24 RM20TPM-2402 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| NTE2347 |
Silicon NPN Transistor General Purpose, Medium Power
|
NTE[NTE Electronics]
|
